Testing of materials for semiconductor technology - Determination of impurities in carrier gases and dopant gases - Part 2: Determination of Oxygen impurities in Nitrogen, Argon, Helium, Neon and Hydrogen using a galvanic cell
Abstract
The method is used to determine the amount of oxygen in the gases of this standard. It determines a proportion between 1 µmol/mol and 10 µmol/mol and can be used to analyze the residual oxygen content in the gases nitrogen, argon, helium, neon and hydrogen. The applicability to other gases and lower detection limits must be checked in each case.
Begin
2025-02-03
Planned document number
DIN 50450-2
Project number
06236881
Responsible national committee
NA 062-05-73 AA - Gas analysis and gas quality
draft standard
Testing of materials for semiconductor technology - Determination of impurities in carrier gases and dopant gases - Part 2: Determination of Oxygen impurities in Nitrogen, Argon, Helium, Neon and Hydrogen using a galvanic cell
2025-07
Order from DIN Media
